C -> C
Sputtering yield
[1]
,
[2]
,
[3]
Sputtered energy
[1]
,
[2]
,
[3]
Particle reflection coefficient
[1]
,
[2]
,
[3]
Energy reflection coefficient
[1]
,
[2]
,
[3]
Average depth of implantation
[1]
,
[2]
,
[3]
Maxwellian velocity distribution of incidence
[Vsh=0 kT]
,
[Vsh=3 kT]
,
[Vsh=9 kT]
13
C ->
12
C
Sputtering yield
Sputtered energy
Particle reflection coefficient
[1]
Energy reflection coefficient
[1]
Average depth of implantation
Maxwellian velocity distribution of incidence